• DocumentCode
    1060652
  • Title

    A complementary DMOS-VMOS IC structure

  • Author

    Jhabvala, M. ; Lin, H.C.

  • Author_Institution
    NASA, GSFC, Greenbelt, MD
  • Volume
    25
  • Issue
    7
  • fYear
    1978
  • fDate
    7/1/1978 12:00:00 AM
  • Firstpage
    848
  • Lastpage
    850
  • Abstract
    A new complementary MOS structure has been fabricated consisting of a p-channel DMOS transistor and an n-channel double-diffused VMOS transistor. The transconductance of each transistor was between 0.85-0.98 of the theoretical gm. The threshold voltages have been adjusted by either ion implantation or by adjusting the diffusion profiles. The inverter operation is similar to that of standard CMOS.
  • Keywords
    Cyclic redundancy check; Electron devices; Etching; Inverters; MOSFETs; Oxidation; Silicon; Solid state circuits; Threshold voltage; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1978.19185
  • Filename
    1479579
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1060652