Title :
1 K-bit nonvolatile semiconductor read/write RAM
Author :
Uchida, Yukimasa ; Saito, Shozo ; Nakane, Masayoshi ; Endo, Norio ; Matsuo, Takeshi ; Nishi, Yoshio
Author_Institution :
Toshiba Research and Development Center, Kawasaki, Kanagawa, Japan
fDate :
8/1/1978 12:00:00 AM
Abstract :
A 1024-bit nonvolatile semiconductor read/write random access memory (RAM) is described which is operated as a static RAM under a stable power supply, and the stored information can be transferred into MNOS memory transistors for nonvolatile storage when the power supply is turned off. A nonvolatile flip-flop cell consisting of 8 MOS transistors and 2 MNOS transistors is used on the basis of p-channel silicon gate technology. The chip size is 4.36 × 5.50 mm2. Typical read access time is 900 ns, and the stored data can last for more than one year. Endurable power on and off cycles are 105cycles.
Keywords :
MOSFETs; Nonvolatile memory; Random access memory; Read-write memory; Semiconductor films; Silicon; Substrates; Threshold voltage; Tiles; Writing;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19225