DocumentCode :
1061274
Title :
Thin-film DC electroluminescent devices of an In2 O3 -ZnS : Mn-ZnSe-Al structure
Author :
Okamoto, K. ; Tanaka, Shoji ; Kobayashi, Hideo ; Sasakura, H.
Volume :
25
Issue :
9
fYear :
1978
fDate :
9/1/1978 12:00:00 AM
Firstpage :
1170
Lastpage :
1172
Abstract :
Thin-film electroluminescent (EL) devices having a conductor-semiconductor-resistor-metal (CSRM) structure (In2 O3 -ZnS: Mn-ZnSe-Al), that are capable of dc excitation, have been prepared. The brightness is 50 fL and the external quantum efficiency is 5 × 10-5. To clarify the effect of the ZnSe layer, 
and 
characteristics for dc excitation were studied at room temperature. The experimental results show that the ZnSe layer acts as a distributed resistive layer that protects the ZnS:Mn emitting layer against breakdown due to avalanche current.
and characteristics for dc excitation were studied at room temperature. The experimental results show that the ZnSe layer acts as a distributed resistive layer that protects the ZnS:Mn emitting layer against breakdown due to avalanche current.Keywords :
Brightness; Circuits; Electrodes; Electroluminescent devices; Insulation; Metal-insulator structures; Pulse measurements; Temperature; Thin film devices; Zinc compounds;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1978.19244
Filename :
1479638
Link To Document :
