DocumentCode :
1061436
Title :
GaAs-GaAlAs heterostructure lasers on semi-insulating substrates
Author :
Lee, Chien-ping ; Margalit, Shlomo ; Yariv, Amnon
Author_Institution :
Bell Laboratories, Holmdel, NJ
Volume :
25
Issue :
10
fYear :
1978
fDate :
10/1/1978 12:00:00 AM
Firstpage :
1250
Lastpage :
1256
Abstract :
Two structures of GaAs-GaAlAs heterostructures were fabricated on semi-insulating substrates. Low-threshold single-mode operation was achieved. The integration of a laser with an active electronic device (Gunn oscillator) on the same chip of GaAs was demonstrated.
Keywords :
Couplers; Electron mobility; Electron optics; Etching; Gallium arsenide; Gunn devices; High speed optical techniques; Optical devices; Oscillators; Substrates;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1978.19260
Filename :
1479654
Link To Document :
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