Measurement Technique for the Static Output Characterization of High-Current Power MOSFETs

A technique for measuring the static output characteristics of high-current power metal-oxide-semiconductor field-effect transistors is presented. The approach aims at the mitigation of self-heating, which is the source of significant measurement errors in modern commercial curve tracers. The technique is based on the principle of stimulation by means of voltage ramps that allow for fast transient measurements. This, however, implies the excitation of electric parasitic impedances in the device under test (DUT). This paper describes how to control these disturbances and defines the measurement conditions upon which a specified minimum accuracy is guaranteed. Experimental results compare the performance of the measurement method with that of a conventional curve tracer.