Title :
Theoretical considerations on the effects of bulk charge on VMOST characteristics
Author :
Greeneich, Edwin W.
Author_Institution :
Motorola, Inc., Phoenix, AZ
fDate :
5/1/1979 12:00:00 AM
Abstract :
A linear approximation to the bulk-charge effect in short-channel VMOS devices is presented which allows for an explicit solution to the volt-ampere characteristics in the presence of velocity saturation effects. The results are shown to agree closely with the more complex exact analysis.
Keywords :
Charge carrier density; Charge carrier processes; Delay effects; Electrical resistance measurement; Electron devices; Ionization; Length measurement; Silicon; Space charge; Time measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19498
