Title :
Comparison of undoped and doped high resistivity CdTe and (Cd,Zn)Te detector Crystals
Author :
Fiederle, M. ; Fauler, A. ; Konrath, J. ; Babentsov, V. ; Franc, J. ; James, R.B.
Author_Institution :
Freiburger Materialforschungszentrum, Albert-Ludwigs-Univ. Freiburg, Germany
Abstract :
CdTe and (Cd,Zn)Te crystals were grown to study the compensation mechanism and the influence on the transport properties. Undoped and doped crystals with Sn, In, and Ge were grown. The crystals showed resistivities up to 109 Ωcm and higher. The transport properties depended strongly on the dopant and the compensation mechanism. For the doping with a deep donor, the mobility-lifetime product of electrons were 2×10-5 cm/V and 4×10-4 mcm2/V for Ge and Sn doped, respectively. The highest values were obtained for In doped (Cd,Zn)Te with 3.3×10-3 cm2/V.
Keywords :
crystal growth; deep levels; doping profiles; electrical resistivity; electron mobility; germanium; impurity states; indium; semiconductor counters; tin; (Cd,Zn)Te detector; CdTe detector; Ge; In; Sn; compensation mechanism; crystal growth; deep donors; dopant dependence; doped crystal; electron; high resistivity crystal; mobility-lifetime product; radiation detector; transport properties; undoped crystal; Cadmium; Conductivity; Crystalline materials; Crystals; Detectors; Doping; Mechanical factors; Semiconductor process modeling; Tellurium; Tin;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2004.832958
