DocumentCode :
1064381
Title :
Optimizing the Operation of Terahertz Silicon Lasers
Author :
Pavlov, Sergey G. ; Hübers, Heinz-Wilhelm ; Böttger, Ute ; Zhukavin, Roman Kh ; Tsyplenkov, Veniamin V. ; Kovalevsky, Konstantin A. ; Shastin, Valery N.
Author_Institution :
German Aerosp. Center (DLR), Inst. of Planetary Res., Berlin
Volume :
15
Issue :
3
fYear :
2009
Firstpage :
925
Lastpage :
932
Abstract :
In this paper, a thorough characterization of terahertz silicon lasers with respect to doping concentration and operation temperature has been carried out. Several factors limiting the laser operation, such as heating of the laser crystal and absorption by photoinduced free carriers, are discussed. The optimal doping concentration has been determined. The influence of the pump geometry on the laser efficiency has been investigated. It was found that an external uniaxial force applied to the laser crystal lowers the pump threshold and increases the output power.
Keywords :
elemental semiconductors; laser beams; optical materials; optical pumping; semiconductor lasers; silicon; submillimetre wave lasers; Si; laser crystal heating; laser pump threshold; optimal doping concentration; photoinduced free carrier absorption; terahertz silicon laser; Absorption; Doping; Geometrical optics; Heating; Laser excitation; Power generation; Power lasers; Pump lasers; Silicon; Temperature; Phonons; silicon (Si); stimulated emission;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2008.2011492
Filename :
5068483
Link To Document :
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