DocumentCode :
1064661
Title :
Yellow—Green In1-x Gax P and In1-x Gax P1-z Asz LED´s and electron-beam-pumped lasers prepared by LPE and VPE
Author :
Ermakov, O.N. ; Garba, L.S. ; Golovanov, Y.A. ; Sushkov, V.P. ; Chukichev, M.V. ; Sushkov, V.P. ; Chukichev, M.V.
Author_Institution :
Ministry of Electronic Industry of the USSR, Moscow, USSR
Volume :
26
Issue :
8
fYear :
1979
fDate :
8/1/1979 12:00:00 AM
Firstpage :
1190
Lastpage :
1193
Abstract :
In1-x GAx Px ( 
= 0.6-0.7) and In1-x Gax Asz P1-z ( = 0.7- 0.8 and 
= 0-0.2) epitaxial structures for visible LED\´s and electron-beam-pumped lasers have been fabricated both by vapor-phase epitaxy (VPE) and by liquid-phase epitaxy (LPE). The crystal perfection and luminescent properties of layers grown on
= 0.6-0.7) and In = 0.7- 0.8 and = 0-0.2) epitaxial structures for visible LED\´s and electron-beam-pumped lasers have been fabricated both by vapor-phase epitaxy (VPE) and by liquid-phase epitaxy (LPE). The crystal perfection and luminescent properties of layers grown onKeywords :
Cooling; Crystallization; Epitaxial growth; Epitaxial layers; Gallium arsenide; Lattices; Solids; Substrates; Surface morphology; Temperature;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1979.19575
Filename :
1480153
Link To Document :
