Title :
Analysis of the high temperature characteristics of InGaAs-AlGaAs strained quantum-well lasers
Author :
Derry, P.L. ; Fu, R.J. ; Hong, C.S. ; Chan, E.Y. ; Figueroa, L.
Author_Institution :
Boeing Defense & Space Group, Seattle, WA, USA
fDate :
12/1/1992 12:00:00 AM
Abstract :
The effect of high temperature on the threshold gain and threshold current density of an In0.15Ga0.85As strained quantum-well laser is examined both theoretically and experimentally. It is found that the nonlinearity of the gain-versus-current relationship increases with temperature. The implications of this result on laser cavity design for optimal high-temperature performance are discussed. The effect of high temperature on modulation bandwidth is also considered. While the numerical results are specific to an In0.15 Ga0.85As strained quantum-well laser, qualitatively they apply to all quantum-well lasers
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical modulation; semiconductor lasers; InGaAs-AlGaAs; gain-versus-current relationship; high temperature characteristics; laser cavity design; modulation bandwidth; nonlinearity; optimal high-temperature performance; strained quantum-well lasers; threshold current density; threshold gain; Free electron lasers; Gallium arsenide; Heating; Laser modes; Laser theory; Optical pulses; Quantum well lasers; Temperature dependence; Temperature measurement; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
