DocumentCode
1065337
Title
Note on unilateral power gain as applied to submicrometre transistors
Author
Vickes, H.O.
Author_Institution
Div. of Network Theory, Chalmers Univ of Technol., Gothenburg
Volume
24
Issue
24
fYear
1988
fDate
11/24/1988 12:00:00 AM
Firstpage
1503
Lastpage
1505
Abstract
A theoretical analysis of the unilateral power gain applied to submicrometre transistors for high-frequency performance is presented. The new exact formulas shows that one can distinguish three resonant conditions. The conclusions are based on analysis of two different equivalent circuits
Keywords
equivalent circuits; field effect transistors; semiconductor device models; solid-state microwave devices; EHF; FET; MM-wave devices; equivalent circuits; exact formulas; high-frequency performance; microwave transistors; models; resonant conditions; submicrometre transistors; submicron transistors; theoretical analysis; unilateral power gain;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
27930
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