• DocumentCode
    1065752
  • Title

    E2FAMOS—An electrically eraseable reprogrammable charge storage device

  • Author

    Yaron, Giora ; Lukaszek, W.A. ; Frohman-Bentchkowsky, Dov

  • Author_Institution
    Hughes Research Center, Newport Beach, CA
  • Volume
    26
  • Issue
    11
  • fYear
    1979
  • fDate
    11/1/1979 12:00:00 AM
  • Firstpage
    1754
  • Lastpage
    1759
  • Abstract
    A new electrically eraseable nonvolatile charge storage device is described. The electrically eraseable floating-gate avalanche injection MOS (E2FAMOS) structure is an n-channel dual-stacked-gate MOS transistor programmed by avalanche injection from the pinchoff region and erased by hot electron injection from the floating gate.
  • Keywords
    Dielectric devices; Dielectric substrates; Dielectrics and electrical insulation; FETs; MOSFETs; Nonvolatile memory; Secondary generated hot electron injection; Semiconductor memory; Tunneling; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1979.19681
  • Filename
    1480259
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1065752