DocumentCode
1065775
Title
Thermal instability—The precursor to switching in inhomogeneous thin films
Author
Shaw, Melvin P.
Author_Institution
Wayne State University, Detroit, MI
Volume
26
Issue
11
fYear
1979
fDate
11/1/1979 12:00:00 AM
Firstpage
1766
Lastpage
1771
Abstract
Thermal stability criteria capable of explaining Thoma´s observations that bias-induced reversible switching transitions in inhomogeneous thin insulating and semiconducting films occur at a critical value of local power density are developed and analyzed. One model, based on a relation between the temperature and heat current, is then applied to specific inhomogeneous thin amorphous chalcogenide films, and good qualitative agreement is shown to exist between theory and experiment.
Keywords
Amorphous materials; Crystalline materials; Crystallization; Insulation; Power semiconductor switches; Semiconductivity; Semiconductor thin films; Stability criteria; Temperature; Transistors;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1979.19683
Filename
1480261
Link To Document