• DocumentCode
    1065775
  • Title

    Thermal instability—The precursor to switching in inhomogeneous thin films

  • Author

    Shaw, Melvin P.

  • Author_Institution
    Wayne State University, Detroit, MI
  • Volume
    26
  • Issue
    11
  • fYear
    1979
  • fDate
    11/1/1979 12:00:00 AM
  • Firstpage
    1766
  • Lastpage
    1771
  • Abstract
    Thermal stability criteria capable of explaining Thoma´s observations that bias-induced reversible switching transitions in inhomogeneous thin insulating and semiconducting films occur at a critical value of local power density are developed and analyzed. One model, based on a relation between the temperature and heat current, is then applied to specific inhomogeneous thin amorphous chalcogenide films, and good qualitative agreement is shown to exist between theory and experiment.
  • Keywords
    Amorphous materials; Crystalline materials; Crystallization; Insulation; Power semiconductor switches; Semiconductivity; Semiconductor thin films; Stability criteria; Temperature; Transistors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1979.19683
  • Filename
    1480261