DocumentCode :
1066300
Title :
Controllable readout circuit for indium gallium arsenide photodiode array applications
Author :
Hwang, Y.-S. ; Wang, S.-C. ; Lai, B.-P. ; Chen, J.-J.
Author_Institution :
Dept. of Electron. Eng., Nat. Taipei Univ. of Technol., Taipei
Volume :
3
Issue :
3
fYear :
2009
fDate :
6/1/2009 12:00:00 AM
Firstpage :
125
Lastpage :
134
Abstract :
This study presents a controllable integration time readout integrated circuit (ROIC) with a 32 by 32 indium gallium arsenide (InGaAs) detector array. This ROIC is designed for InGaAs photodiode (PD) array detectors to operate at low input current and is suitable for the focal plane array (FPA) in near infrared (NIR) field. The integration time of this ROIC can be controlled by an external clock pulse, and is adjustable from 0.5 s to infinity by varying the light intensity. Moreover, the pre-stage of ROIC is based on the buffer gate modulation input (BGMI) architecture with differential structure and a double delta sampling (DDS) circuit, providing better sensitivity, a wider dynamic range, a higher injection efficiency and reduced noise. Further, because this ROIC is built into a sample-and-hold circuit in the unit cell, it can operate in the full frame snapshot mode. The proposed ROIC has 1024 pixels and a 30-mum pixel pitch. It is implemented using Taiwan Semiconductor Manufacturing Company (TSMC) 0.35 mum Complementary Metal-Oxide-Semiconductor (CMOS) process with a 5-V power supply. The output swing is over 2.2 V. It has 5 non-linearity, 91.559 mW chip power dissipation and a chip area of 1.628 2.341 mm2 without pads.
Keywords :
CMOS integrated circuits; gallium arsenide; image resolution; indium compounds; photodetectors; photodiodes; readout electronics; sensor arrays; InGaAs; buffer gate modulation input architecture; chip area; complementary metal-oxide-semiconductor process; controllable integration time readout integrated circuit; double delta sampling circuit; external clock pulse; focal plane array; full frame snapshot mode; indium gallium arsenide detector array; indium gallium arsenide photodiode array applications; near infrared field; power dissipation; power supply; reduced noise; sample-and-hold circuit; size 30 mum; unit cell;
fLanguage :
English
Journal_Title :
Circuits, Devices & Systems, IET
Publisher :
iet
ISSN :
1751-858X
Type :
jour
DOI :
10.1049/iet-cds.2008.0343
Filename :
5069979
Link To Document :
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