Title :
TP-C7 gallium indium arsenide 1.3-micrometer photodiodes
Author :
Mabbitt, A.W. ; Ahmad, Khadher ; Nicklin, R. ; Jenkins, Devon
fDate :
11/1/1979 12:00:00 AM
Keywords :
Charge carrier density; Contracts; Diodes; Electrons; Gallium arsenide; Gallium compounds; III-V semiconductor materials; Indium gallium arsenide; Laboratories; Photodiodes;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19746
