Title :
WA-A6 short-channel nonequilibrium effects in buried-channel structures
Author :
Taylor, Graham W. ; Chatterjee, P.K.
fDate :
11/1/1979 12:00:00 AM
Keywords :
Boundary conditions; DRAM chips; Dielectric devices; Electrostatic measurements; MESFETs; MOSFET circuits; Particle scattering; Quantization; Semiconductor devices; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19760
