DocumentCode
1066693
Title
Reliability studies on GaAs MESFETs fabricated using spin-on platinum source
Author
Prasad, K.
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst.
Volume
30
Issue
6
fYear
1994
fDate
3/17/1994 12:00:00 AM
Firstpage
528
Lastpage
529
Abstract
GaAs MESFETs were fabricated using a spin-on platinum source as the gate material. They were subsequently aged at 200°C for up to 1000 h. DC electrical characterisation of the MESFETs was carried out during various stages of annealing. The aging behaviour of these MESFETs was compared with those fabricated using conventionally evaporated platinum sources. The results show that the performance of the MESFETs fabricated using a spin-on platinum source is comparable to those of MESFETs fabricated using a conventionally evaporated platinum source
Keywords
III-V semiconductors; Schottky gate field effect transistors; ageing; annealing; gallium arsenide; life testing; platinum; reliability; 1000 hour; 200 C; DC electrical characterisation; GaAs MESFETs; Pt-GaAs; VPE growth; aging behaviour; annealing; gate material; reliability study; spin-on Pt source;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940351
Filename
280525
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