DocumentCode :
1066722
Title :
Response mechanism of SiC-based MOS field-effect gas sensors
Author :
Schalwig, Jan ; Kreisl, Patrick ; Ahlers, Simon ; Müller, Gerhard
Author_Institution :
Corp. Res. Centre, Munich, Germany
Volume :
2
Issue :
5
fYear :
2002
fDate :
10/1/2002 12:00:00 AM
Firstpage :
394
Lastpage :
402
Abstract :
SiC-based field-effect gas sensors with catalytic platinum electrodes (Pt-MOSiC) have been subjected to a series of gas response measurements. Structural analysis of the Pt electrodes revealed that the gas sensitivity and the selectivity of Pt-MOSiC gas sensors depend on two major parameters: the porosity and the catalytic activity of the Pt electrodes. Pt-MOSiC gas sensors with thick, dense Pt electrodes only exhibit hydrogen sensitivity, whereas Pt-MOSiCs with thin porous gates exhibit a broad range of gas sensitivities similar to resistive metal-oxide gas sensors. A model is put forward that explains the nonhydrogen gas response of Pt-MOSiC devices and of conventional polycrystalline metal-oxide materials on a common basis.
Keywords :
MIS devices; catalysis; gas sensors; platinum; porosity; semiconductor device measurement; silicon compounds; wide band gap semiconductors; MOS field-effect gas sensors; Pt-SiO2-SiC; catalytic activity; catalytic platinum electrodes; gas response measurements; gas sensitivity; nonhydrogen gas response; porosity; selectivity; structural analysis; Electrodes; Gas detectors; Gases; Hydrogen; Inorganic materials; MOSFETs; Platinum; Schottky diodes; Silicon carbide; Temperature sensors;
fLanguage :
English
Journal_Title :
Sensors Journal, IEEE
Publisher :
ieee
ISSN :
1530-437X
Type :
jour
DOI :
10.1109/JSEN.2002.806214
Filename :
1158764
Link To Document :
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