Title :
A 3-V, 0.35-μm CMOS Bluetooth receiver IC
Author :
Sheng, Wenjun ; Xia, Bo ; Emira, Ahmed E. ; Xin, Chunyu ; Valero-Lopez, A.Y. ; Moon, Sung Tae ; Sánchez-Sinencio, Edgar
Author_Institution :
Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA
fDate :
1/1/2003 12:00:00 AM
Abstract :
A fully integrated CMOS low-IF Bluetooth receiver is presented. The receiver consists of a radio frequency (RF) front end, a phase-locked loop (PLL), an active complex filter, a Gaussian frequency shift keying (GFSK) demodulator, and a frequency offset cancellation circuit. The highlights of the receiver include a low-power active complex filter with a nonconventional tuning scheme and a high-performance mixed-mode GFSK demodulator. The chip was fabricated on a 6.25-mm2 die using TSMC 0.35-μm standard CMOS process. -82 dBm sensitivity at 1e-3 bit error rate, -10 dBm IIP3, and 15 dB noise figure were achieved in the measurements. The receiver active current is about 65 mA from a 3-V power supply.
Keywords :
Bluetooth; CMOS integrated circuits; demodulators; frequency shift keying; mixed analogue-digital integrated circuits; radio receivers; 0.35 micron; 3 V; 65 mA; CMOS Bluetooth receiver IC; GFSK demodulator; Gaussian frequency shift keying; PLL; RF front end; TSMC standard CMOS process; active complex filter; frequency offset cancellation circuit; low-IF Bluetooth receiver; phase-locked loop; tuning scheme; Active filters; Bluetooth; CMOS integrated circuits; Circuit optimization; Demodulation; Frequency shift keying; Phase locked loops; Radio frequency; Radiofrequency integrated circuits; Receivers;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2002.806277
