Title :
Accurate Analytical Physical Modeling of Amorphous InGaZnO Thin-Film Transistors Accounting for Trapped and Free Charges
Author :
Ghittorelli, M. ; Torricelli, F. ; Colalongo, L. ; Kovacs-Vajna, Z.M.
Author_Institution :
Dept. of Inf. Eng., Univ. of Brescia, Brescia, Italy
Abstract :
A physical-based and analytical drain current model of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) is proposed. The model considers the combined contribution of both trapped and free charges that move through the a-IGZO film by multiple-trapping-and-release and percolation in conduction band. The model is compared with both measurements of TFTs fabricated on a flexible substrate and numerical simulations. It is accurate in the whole range of a-IGZO TFTs operation. The model requires only physical and geometrical device parameters. The resulting mathematical expressions are suitable for computer-aided design implementation and yield the material physical parameters that are essential for process characterization.
Keywords :
amorphous semiconductors; electronic design automation; thin film transistors; wide band gap semiconductors; InGaZnO; TFT; amorphous indium gallium zinc oxide thin-film transistors; amorphous thin film transistors; analytical drain current model; computer-aided design; free charges; multiple-trapping-and-release; trapped charges; Analytical models; Approximation methods; Mathematical model; Solid modeling; Thin film transistors; Transistors; Computer-aided design (CAD) applications; indium gallium zinc oxide (IGZO); thin-film transistor (TFT); thin-film transistor (TFT).;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2014.2361062
