Title :
Monolithic GaAs/AlGaAs optical transmitter circuit using a single growth step
Author :
Nichols, D.T. ; Lopata, J. ; Hobson, W.S. ; Dutta, N.K. ; Berger, P.R. ; Sivco, D.L. ; Cho, Andrew Y.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ
fDate :
3/17/1994 12:00:00 AM
Abstract :
A strained GaAs/AlGaAs/InGaAs MQW laser has been monolithically integrated with GaAs MESFETs in a differential pair configuration to form a transmitter circuit. The structure used a single epitaxial growth step in which the laser was grown on top of the MESFET. The circuits operate with bandwidths as high as 3.4 GHz
Keywords :
III-V semiconductors; aluminium compounds; field effect integrated circuits; gallium arsenide; integrated optoelectronics; optical communication equipment; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 3.4 GHz; GaAs MESFET; GaAs-AlGaAs-InGaAs; MOCVD; bandwidths; differential pair configuration; monolithic GaAs/AlGaAs optical transmitter circuit; monolithic integration; single epitaxial growth step; single growth step; strained GaAs/AlGaAs/InGaAs MQW laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940332
