One micrometre scale self-aligned cobalt disilicide Schottky barrier diodes

CoSi₂/n-type silicon(111) Schottky barrier diodes on a 1 μm scale have been fabricated using a self-aligned silicide process incorporating magnetron sputtering and rapid thermal processing, in an industrial environment. Anneal temperatures in the range 700-1100°C have been used, and ideality factors of 1.06-1.07 were obtained in the range 700-900°C with larger values for higher temperatures. The consistency in the values of the ideality factor indicates that a wide annealing temperature window exists for the successful fabrication of CoSi₂/silicon diodes