Title :
Comparison between tensile-strained AlGaInP SQW and MQW LDs emitting at 615 nm
Author :
Tanaka, T. ; Yanagisawa, H. ; Minagawa, S.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Kokubunji
fDate :
3/31/1994 12:00:00 AM
Abstract :
The optimum design for tensile-strained quantum-well structures, and the laser characteristics of AlGaInP LDs emitting at 615-635 nm are investigated. MQW structures are effective in reducing threshold currents at wavelengths shorter than 620 nm. The lowest threshold current of 95 mA at 20°C is attained in a quaternary MQW LD emitting at 615 nm
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor lasers; 20 C; 615 to 635 nm; 95 mA; AlGaInP; MQW LDs; MQW structures; SQW; laser characteristics; optimum design; quaternary MQW LD; tensile-strained; tensile-strained quantum-well structures; threshold currents;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940413
