DocumentCode :
1067539
Title :
On the geometrical factor of lateral p-n-p transistors
Author :
Seo, Kwang-seok ; Kim, Choong-ki
Author_Institution :
Korea Institute of Electronics Technology, Seoul, Korea
Volume :
27
Issue :
1
fYear :
1980
fDate :
1/1/1980 12:00:00 AM
Firstpage :
295
Lastpage :
297
Abstract :
A simple analytical expression has been derived for the geometrical factor of lateral p-n-p transistors and is compared with the two-dimensional computer solution by Chou. Reasonable agreement has been found between the two analyses when (basewidth at the surface/junction depth) ≳ 0.5 and (epitaxial layer thickness/junction depth) 
.
.Keywords :
Atomic layer deposition; Dielectric constant; Electric breakdown; Electron devices; MOSFETs; Permittivity; Semiconductor thin films; Silicon; Solid state circuits; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1980.19855
Filename :
1480648
Link To Document :
