DocumentCode :
1067734
Title :
Optically pumped epitaxial GaAs waveguide lasers with distributed Bragg reflectors
Author :
Tseng, Cheng-Chung ; Botez, Dan ; Wang, Shyh
Author_Institution :
University of California, Berkeley, CA, USA
Volume :
12
Issue :
9
fYear :
1976
fDate :
9/1/1976 12:00:00 AM
Firstpage :
549
Lastpage :
551
Abstract :
Fabrication and characteristics of epitaxial waveguide lasers with distributed Bragg reflectors are described. GaAs-(GaAl)As double-layered structures were grown by conventional liquid-phase-epitaxy (LPE) technique. Periodic corrugations were made by chemical etching through a photoresist grating mask. Laser action with clearly defined logitudinal modes was observed under optical pumping at liquid-nitrogen temperature.
Keywords :
Chemical lasers; Distributed Bragg reflectors; Gallium arsenide; Laser excitation; Laser modes; Optical device fabrication; Optical pumping; Optical waveguides; Pump lasers; Waveguide lasers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1976.1069211
Filename :
1069211
Link To Document :
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