• DocumentCode
    1067768
  • Title

    Low temperature silicon nitride deposition by direct photolysis using high power krypton flash lamps

  • Author

    Dulac, O. ; Nissim, Y.I.

  • Author_Institution
    JIPELEC SA, Grenoble
  • Volume
    30
  • Issue
    7
  • fYear
    1994
  • fDate
    3/31/1994 12:00:00 AM
  • Firstpage
    602
  • Lastpage
    603
  • Abstract
    Silicon nitride films have been deposited on InP using a photochemical process. A high power krypton flash lamp was used to produce the direct photolysis of conventional reactive gases with the highest deposition rates ever reported in UVCVD (93 Å/min). Also, the high UV fluence allows a cold process and results in films with excellent structural and electrical properties
  • Keywords
    CVD coatings; chemical vapour deposition; flash lamps; photolysis; silicon compounds; InP; Kr; Si3N4; Si3N4 CVD deposited films; UVCVD; cold process; direct photolysis; electrical properties; high UV fluence; high power krypton flash lamps; highest deposition rates; low temperature silicon nitride deposition; photochemical process; reactive gases; structural properties;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940409
  • Filename
    280626
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1067768