DocumentCode :
1067777
Title :
Measurement of plasma electron density generated by a semiconductor bridge (SCB)
Author :
Kim, Jung-Ho ; Schamiloglu, Edl ; Jungling, K.C.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM
Volume :
30
Issue :
7
fYear :
1994
fDate :
3/31/1994 12:00:00 AM
Firstpage :
603
Lastpage :
604
Abstract :
To gain better understanding of semiconductor bridge (SCB) discharge behaviour, we have measured the plasma electron density generated by SCBs using a microwave resonator probe technique in a vacuum (⩽10-5 torr). This method is superior to Langmuir probes in this application because of sheath effects, small bridge areas, and unknown fraction of multiple ions
Keywords :
Langmuir probes; bridge instruments; plasma density; plasma diagnostic techniques; Langmuir probes; discharge behaviour; microwave resonator probe technique; multiple ions; plasma electron density; semiconductor bridge; sheath effects; small bridge areas;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19940380
Filename :
280627
Link To Document :
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