• DocumentCode
    1067797
  • Title

    Rapid photo-deposition of silicon dioxide films using 172 nm VUV light

  • Author

    Bergonzo, P. ; Boyd, I.W.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Univ. Coll. London
  • Volume
    30
  • Issue
    7
  • fYear
    1994
  • fDate
    3/31/1994 12:00:00 AM
  • Firstpage
    606
  • Lastpage
    608
  • Abstract
    A new method is presented for the rapid direct photo-deposition of silicon dioxide using silane and oxygen mixtures and 172 nm radiation generated from a xenon excimer lamp. The growth rates obtained reach 500 Å/min at 300°C, some 200% faster than previously achieved using either low temperature CVD or traditional optical sources
  • Keywords
    chemical vapour deposition; silicon compounds; 172 nm; 300 C; CVD deposition; SiO2; VUV light; direct photo-deposition; growth rates; low temperature CVD; optical sources; oxygen mixtures; rapid photo-deposition; silane; xenon excimer lamp;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940412
  • Filename
    280629
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1067797