Title :
Static negative resistance in calculated MESFET drain characteristics
Author :
Norton, David E. ; Hayes, Russell E.
fDate :
3/1/1980 12:00:00 AM
Abstract :
Static negative-resistance regions in MESFET drain current-voltage characteristics are sometimes observed in results obtained by computer-modeling techniques. This paper shows that in some cases these negative-resistance regions may be numerically induced by an inappropriate choice of the spatial mesh size used in the calculation. A criterion for choosing a sufficiently small mesh size is given.
Keywords :
Computational modeling; Computer simulation; Epitaxial layers; Equations; Indium phosphide; MESFETs; Numerical simulation; Spatial resolution; Substrates; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.19900
