• DocumentCode
    1068006
  • Title

    Failures-tolerance and remedial strategies of a PWM multicell inverter

  • Author

    Richardeau, Frédéric ; Baudesson, Philippe ; Meynard, Thierry A.

  • Author_Institution
    Lab. d´´Electrotechnique et d´´Electronique In-dustrielle, ENSEEIHT, Toulouse, France
  • Volume
    17
  • Issue
    6
  • fYear
    2002
  • fDate
    11/1/2002 12:00:00 AM
  • Firstpage
    905
  • Lastpage
    912
  • Abstract
    The aim of this paper is to explain the intrinsic short-circuit tolerance of an IGBT multicell inverter when a commutation failure occurs. Such a failure may either be a wrong gate voltage (malfunctioning of the driver board, auxiliary power supply failure, dv/dt disturbance) or an intrinsic IGBT failure (over-voltage/avalanche stress, temperature overshoot). IGBT stresses are studied and show that no opening of the bonding can appear and consequently no risk of explosion. That is why, owing to the imbricated cells structure, an IGBT short-circuit failure may be withstood for a few switching periods, with nevertheless nonoptimized output waveforms. The design, the lab-test of a sensor able to perform monitoring as well as the failure diagnosis are also presented. This real-time diagnosis allows either a safe stop or a remedial control strategy based on the reconfiguration of the PWM modulator. The reconfiguration strategy enables decrease of internal stresses and optimization of the output shape. A fail-safe operating may be gained for high power applications.
  • Keywords
    PWM invertors; commutation; failure analysis; insulated gate bipolar transistors; short-circuit currents; switching convertors; IGBT multicell inverter; IGBT stresses; PWM modulator reconfiguration; PWM multicell inverter; auxiliary power supply failure; commutation failure; driver board malfunctioning; dv/dt disturbance; failure diagnosis; failures-tolerance; imbricated cells structure; intrinsic IGBT failure; intrinsic short-circuit tolerance; lab-test; nonoptimized output waveforms; over-voltage/avalanche stress; remedial control strategy; remedial strategies; short-circuit tolerance; switching periods; temperature overshoot; wrong gate voltage; Bonding; Condition monitoring; Explosions; Insulated gate bipolar transistors; Power supplies; Pulse width modulation; Pulse width modulation inverters; Stress; Temperature; Voltage;
  • fLanguage
    English
  • Journal_Title
    Power Electronics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0885-8993
  • Type

    jour

  • DOI
    10.1109/TPEL.2002.805588
  • Filename
    1158980