Title :
Ridge waveguide distributed Bragg reflector InGaAs/GaAs quantum well lasers
Author :
Smith, G.M. ; Hughes, John S. ; Osowski, M.L. ; Forbes, David V. ; Coleman, J.J.
Author_Institution :
Microelectron. Lab., Illinois Univ., Urbana, IL
fDate :
4/14/1994 12:00:00 AM
Abstract :
A single growth step ridge waveguide InGaAs/GaAs quantum well laser with one third-order distributed Bragg reflector (DBR) and one cleaved facet is described. The DBR is fabricated with direct write electron beam lithography and transferred into the epilayers by reactive ion etching. These devices operate on a single longitudinal and fundamental lateral mode, with a threshold current of 23 mA and more than 30 dB of sidemode suppression
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; electron beam lithography; gallium arsenide; indium compounds; optical waveguides; semiconductor lasers; sputter etching; 23 mA; DBR laser diodes; InGaAs-GaAs; InGaAs/GaAs; cleaved facet; direct write electron beam lithography; distributed Bragg reflector; epilayers; fundamental lateral mode; quantum well lasers; reactive ion etching; ridge waveguide; sidemode suppression; single growth step; single longitudinal mode; third-order; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940426
