Title :
X-band low-phase noise oscillator employing substrate integrated waveguide dual-mode filter
Author :
Ziqiang Yang ; Bangyu Luo ; Jun Dong ; Tao Yang
Author_Institution :
Sch. of Electron. Eng., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
A novel low-phase noise oscillator employing a substrate integrated waveguide (SIW) dual-mode bandpass filter as a frequency stabilisation element within its feedback loop is proposed. The SIW dual-mode filter is implemented based on the use of the two degenerate modes (TE102 and TE201) and has a larger group delay peak than the conventional SIW cavity resonator. By taking advantage of the large group delay peak, the phase noise of the oscillator has significant improvement. An X-band oscillator with a GaAs HEMT packaged transistor has been designed and measured. At an oscillation frequency of 9.04 GHz, the measured phase noise is -111.9 dBc/Hz at 100 kHz offset. The output power is 6.1 dBm and the figure of merit is -198 dBc/Hz.
Keywords :
III-V semiconductors; band-pass filters; circuit noise; gallium arsenide; high electron mobility transistors; oscillators; phase noise; semiconductor device noise; semiconductor device packaging; substrate integrated waveguides; waveguide filters; GaAs; HEMT packaged transistor; SIW cavity resonator; SIW dual-mode bandpass filter; TE102 mode; TE201 mode; X-band low-phase noise oscillator; feedback loop; frequency 9.04 GHz; frequency stabilisation element; substrate integrated waveguide dual-mode bandpass filter;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2014.4106