DocumentCode
1068372
Title
Physics underlying the performance of back-surface-field solar cells
Author
Fossum, Jerry G. ; Nasby, Robert D. ; Pao, Shing
Author_Institution
University of Florida, Gainesville, FL
Volume
27
Issue
4
fYear
1980
fDate
4/1/1980 12:00:00 AM
Firstpage
785
Lastpage
791
Abstract
A description of the physics of back-surface-field (BSF) solar cells is presented, in which several key approximations, valid for effective BSF cells, have been used to express the results of the analysis in ways that make them useful in understanding the performance of high-efficiency BSF cells. A silicon p+-n-n+BSF solar cell, developed in conjunction with the theoretical treatment, provides experimental support for the theory. Measured current-voltage characteristics, together with the analysis, are used to describe the important physical mechanisms that control the performance of the BSF solar cell. For example, the analysis enables the determinations of the carrier lifetimes in the base region and of the effective surface recombination velocity at the low-high junction.
Keywords
Charge carrier processes; Current density; Current measurement; Performance analysis; Photovoltaic cells; Physics; Silicon; Spontaneous emission; Surface resistance; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1980.19937
Filename
1480730
Link To Document