• DocumentCode
    1068484
  • Title

    Laser scanning of solar cells for the display of cell operating characteristics and detection of cell defects

  • Author

    Sawyer, David E. ; Kessler, Herbert K.

  • Author_Institution
    Chevron Research Company, Richmond Laboratory, Richmond, CA
  • Volume
    27
  • Issue
    4
  • fYear
    1980
  • fDate
    4/1/1980 12:00:00 AM
  • Firstpage
    864
  • Lastpage
    872
  • Abstract
    A new optical scanning technique was developed to map solar-cell operation over the cell area and reveal several types of cell defects. The technique, which makes use of the distributed nature of the cell, an intrinsic property shared by all cells, allows one to detect potentially harmful cracks with a sensitivity greater than any other optical technique reported previously, and it permits one, for the first time, to locate regions of poor metallization. It has also been used to determine efficacy of cell design and to study cell degradation processes. The new scanning technique employs forward biasing of the cell during scanning. Biasing may be achieved through the use of a steady-state light source, or for cells made using conventional semiconductor materials, e.g., silicon and gallium arsenide, the use of an external current source. The scanning technique is nondamaging; it requires no electrical contacts to the cell other than those already present, and it can be used on encapsulated or unencapsulated cells in almost any laboratory or test environment.
  • Keywords
    Degradation; Displays; Gallium arsenide; Light sources; Metallization; Optical sensors; Photovoltaic cells; Semiconductor materials; Silicon; Steady-state;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1980.19948
  • Filename
    1480741