DocumentCode
106883
Title
Terahertz Beam Steering With Doped GaAs Phase Modulator and a Design of Spatial-Resolved High-Speed Terahertz Analog-to-Digital Converter
Author
Zhao Xu ; Mazumder, Prasenjit
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
Volume
61
Issue
6
fYear
2014
fDate
Jun-14
Firstpage
2195
Lastpage
2202
Abstract
In this paper, we have designed and characterized the beam steering structure for terahertz radiation based on doubly corrugated spoofed surface plasmon polariton (DC-SSPP) architecture and analyzed the design of a high-speed terahertz analog-to-digital converter (ADC). Two DC-SSPP waveguides comprising metal-covered GaAs are utilized to build an interferometric structure with localized doping in the groove region. Active modulation of free carrier density in the doped n-GaAs will cause relative phase differences between terahertz beams in separate arms of the interferometer, giving rise to deflected radiation in the far field. In this paper, both mathematical modeling and finite-element simulations are used to verify and optimize the design. Two different architectures operating on the enhancement mode and depletion mode are studied separately in detail. Applying the beam bender in the ADC design poses challenges such as structural symmetry and multibit resolution. With a full differential implementation of the input signal and combination of nonlinear detector arrays with carefully designed gain and saturation power, a 3-bit ADC is demonstrated with higher than 60 GS/s speed and direct digitized readout.
Keywords
III-V semiconductors; analogue-digital conversion; beam steering; carrier density; finite element analysis; gallium arsenide; phase modulation; polaritons; semiconductor doping; silicon; surface plasmons; terahertz wave devices; waveguides; DC-SSPP waveguides; GaAs:Si; beam bender; beam steering structure; doped GaAs phase modulator; doubly corrugated spoofed surface plasmon polariton; finite element simulations; free carrier density; groove region; interferometric structure; localized doping; metal-covered GaAs; multibit resolution; nonlinear detector arrays; spatial-resolved high-speed terahertz analog-to-digital converter; structural symmetry; terahertz beam steering; terahertz radiation; word length 3 bit; Charge carrier density; Doping; Gallium arsenide; Mathematical model; Optical waveguides; Phase modulation; Resonant frequency; Analog-to-digital converter (ADC); beam steering; doubly corrugated spoofed surface plasmon polariton (DC-SSPP); free carrier concentration; terahertz; terahertz.;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2014.2318278
Filename
6810819
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