• DocumentCode
    106897
  • Title

    Characterizations of Nanosilver Joints by Rapid Sintering at Low Temperature for Power Electronic Packaging

  • Author

    Guan-Quan Lu ; Wanli Li ; Yunhui Mei ; Gang Chen ; Xin Li ; Xu Chen

  • Author_Institution
    Sch. of Mater. Sci. & Eng., Tianjin Univ., Tianjin, China
  • Volume
    14
  • Issue
    2
  • fYear
    2014
  • fDate
    Jun-14
  • Firstpage
    623
  • Lastpage
    629
  • Abstract
    Nanosilver paste is a promising lead-free die-attach material suitable for power electronic packaging, particularly for high-temperature applications. Compared with traditional hot pressing to sinter nanosilver, rapid sintering by a pulse current is able to sinter nanosilver in less than a second. To investigate the nanosilver sintering process during rapid sintering, we characterize the temperature field of a nanosilver joint by using an infrared camera. The temperature field is analyzed as a function of current magnitude and current-on time. The relationship between the temperature field and the shear strength of joint is discussed to optimize the rapid sintering parameters. Results show that the joint´s temperature-time curve varies with the current-on time. The shear strength can be up to 40 MPa, which is comparable to the robust hot-press sintered joint, when the peak temperature reaches above 400 °C. The microstructure of these joints is porous with a particle diameter of ~400 nm, and this aids in releasing the internal stresses resulting in higher shear strength.
  • Keywords
    electronics packaging; hot pressing; nanoelectronics; power electronics; silver; sintering; Ag; current magnitude; current-on time; high-temperature applications; hot pressing; infrared camera; internal stress; lead-free die-attach material; nanosilver joints; nanosilver paste; nanosilver sintering process; power electronic packaging; pulse current; rapid sintering; robust hot-press sintered joint; shear strength; temperature field; temperature-time curve; Heating; Joints; Microstructure; Resistance; Silver; Surface treatment; Temperature measurement; Nanosilver; current assisted; electronic packaging; low-temperature joining; microstructure; temperature measurement;
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2014.2306955
  • Filename
    6744610