Status of the GaAs metal—oxide—semiconductor technology

A review of recent and current work on GaAs insulated-gate technology is presented. First, various techniques for the formation of heteromorphic and homomorphic dielectrics are outlined and some important aspects of properties of these dielectrics are reviewed. Second, MOSFET structures, fabrication procedures, and microwave performance are described. Third, the application of GaAs MOSFET´s to digital integrated circuits is summarized.