• DocumentCode
    1069008
  • Title

    Design and fabrication of high-speed GaAlAs/GaAs heterojunction transistors

  • Author

    Bailbe, Jean-pierre ; Marty, Antoine ; Hiep, Pham Huu ; Rey, G.E.

  • Author_Institution
    Laboratoire d´´Automatique et d´´Analyse des Systèmes, Toulouse Cedex, France
  • Volume
    27
  • Issue
    6
  • fYear
    1980
  • fDate
    6/1/1980 12:00:00 AM
  • Firstpage
    1160
  • Lastpage
    1164
  • Abstract
    In this paper we present an analysis of the HF capabilities of GaAlAs/GaAs heterojunction transistors, a description of the technological characteristics of the samples processed by liquid-phase epitaxial technique for UHF applications, and a report of the experimental results already obtained.
  • Keywords
    Capacitance; Current density; Cutoff frequency; Doping profiles; Fabrication; Gallium arsenide; HEMTs; Heterojunctions; MODFETs; Performance gain;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1980.20000
  • Filename
    1480793
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1069008