DocumentCode
1069017
Title
Development of GaAs monolithic power amplifiers in X-band
Author
Sokolov, Vladimir ; Williams, Ralph E.
Author_Institution
Texas Instruments Incorporated, Dallas, TX
Volume
27
Issue
6
fYear
1980
fDate
6/1/1980 12:00:00 AM
Firstpage
1164
Lastpage
1171
Abstract
The design, fabrication, and performance of several GaAs FET monolithic circuits are described. These include a two-stage, four-FET push-pull amplifier that has exhibited 1.4-W output power with 12.4-dB gain at 9.0 GHz, and a three-transistor monolithic paraphase amplifier (unbalanced input, balanced output) exhibiting 6-dB small-signal gain and a 1-dB gain compression point of 20 dBm. The amplifier chips utilize monolithically fabricated inductors, capacitors, and transmission lines to accomplish on-the-chip impedance matching.
Keywords
Capacitors; Circuits; FETs; Fabrication; Gallium arsenide; Impedance matching; Inductors; Power amplifiers; Power generation; Power transmission lines;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1980.20001
Filename
1480794
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