Three-phase GaAs Schottky-barrier CCD operated up to 100-MHz clock frequency

GaAs CCD´s with 5-µm electrodes were fabricated using a process fully compatible to MESFET integrated circuits. The devices were operated at clock frequencies from 100 kHz to 100 MHz. The transfer inefficiency was found to be ≈ 1 × 10^-2in the frequency range from 100 kHz to 30 MHz. This is due to an incomplete charge transfer caused by interelectrode gaps larger than the layer thickness.