Planar sealed-channel gallium arsenide Schottky-barrier charge-coupled devices

We report the demonstration of GaAs Schottky-barrier buried-channel charge-coupled devices(SBCCD´s) that are unique in three respectS. First, a planar configuration has been achieved by use of a Schottky-barrier channel stop. Secondly, a sealed channel has been provided by an overlapping gate structure achieved with two-level gate metal and dielectric isolation. Finally, charge transfer has been obtained with a two-layer GaAs structure, n-type over p-type, as well as with a single n-type layer on a Cr-doped substrate as employed for all previously reported GaAs SBCCD´s. Characterization of charge-transfer behavior has emphasized comparative behavior of the single-and double-layer structures.