Designing the power-handling capabilities of MOS power devices

The considerations involved in the design of soft solder power MOS devices for the industry are described in this study. Numerical models for thermal resistance and thermal fatigue are described with acceptable experimental agreement. An accurate method for the measurement of thermal resistance directly applicable to MOS power devices is described. It has been demonstrated that an optimized die contact geometry will result in rugged MOS devices outperforming, in most cases, their bipolar counterpart.