Monothically Integrated Long-Wavelength Tunable Photodetector

Author

Lv, Jihe ; Huang, Hui ; Ren, Xiaomin ; Miao, Ang ; Li, Yiqun ; Song, Hailan ; Wang, Qi ; Huang, Yongqing ; Cai, Shiwei

Author_Institution

Beijing Univ. of Post & Telecommun., Beijing

Volume

26

Issue

3

fYear

2008

Firstpage

338

Lastpage

342

Abstract

This paper demonstrated a tunable long-wavelength photodetector by using the heteroepitaxy growth of InP-In_0.53Ga_0.47As-InP p-i-n structure on a GaAs-based GaAs/AlAs Fabry-Perot filter structure. High-quality heteroepitaxy was realized by employing a thin low-temperature buffer layer. A wavelength tuning range of 10.0 nm, an external quantum efficiency of about 23%, a spectral linewidth of 0.8 nm, and a 3-dB bandwidth of 6.2 GHz were simultaneously obtained in the device.

Keywords

III-V semiconductors; MOCVD; gallium arsenide; indium compounds; photodetectors; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; Fabry-Perot filter structure; GaAs-AlAs; InP-In_0.53Ga_0.47As-InP; bandwidth 6.2 GHz; heteroepitaxy growth; long-wavelength tunable photodetector; monothically integrated photodetector; p-i-n structure; Educational technology; Gallium arsenide; Indium phosphide; Mirrors; Optical device fabrication; Optical filters; PIN photodiodes; Photodetectors; Substrates; Tunable circuits and devices; Heteroepitaxy; photodetector; tunable;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2007.909971

Filename

4451251