DocumentCode
1069573
Title
Gain-frequency-current relation for Pb1-x Snx Te double heterostructure lasers
Author
Anderson, William W.
Author_Institution
Lockheed Palo Alto Research Laboratory, Palo Alto, CA
Volume
13
Issue
7
fYear
1977
fDate
7/1/1977 12:00:00 AM
Firstpage
532
Lastpage
543
Abstract
The active region gain expression for Pb1-x Snx Te lasers is obtained from the 
model of the conduction and valence band extrema. Curves of gain versus frequency with current, temperature, and majority carrier concentration as parameters are calculated using published values of the model parameters. In addition, threshold current versus temperature and threshold current versus majority carrier concentration curves are given. A simple expression is obtained for the conductivity effective mass for use in the equation for free-carrier absorption appropriate to the highly degenerate majority carrier concentrations typical of Pb1-x Snx Te laser material.
model of the conduction and valence band extrema. Curves of gain versus frequency with current, temperature, and majority carrier concentration as parameters are calculated using published values of the model parameters. In addition, threshold current versus temperature and threshold current versus majority carrier concentration curves are given. A simple expression is obtained for the conductivity effective mass for use in the equation for free-carrier absorption appropriate to the highly degenerate majority carrier concentrations typical of PbKeywords
Absorption; Conductivity; Effective mass; Equations; Frequency; Laser modes; Tellurium; Temperature; Threshold current; Tin;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1977.1069386
Filename
1069386
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