• DocumentCode
    1069797
  • Title

    Embedded-stripe GaAs-GaAlAs double-heterostructure lasers with polycrystalline GaAsP layers - II: Lasers with etched mirrors

  • Author

    Itoh, Kunio ; Asahi, Kunihiko ; Inoue, Mono ; Teramoto, Iwao ; Asahi, Koichiro ; Inoue, M. ; Teramoto, I.

  • Author_Institution
    Matsushita Electronics Corporation, Takatsuki, Osaka, Japan
  • Volume
    13
  • Issue
    8
  • fYear
    1977
  • fDate
    8/1/1977 12:00:00 AM
  • Firstpage
    628
  • Lastpage
    631
  • Abstract
    Monolithic CW lasers with low threshold are reported in which mesa stripes are embedded with vapor-phase-grown high-resistivity GaAsP layers and cavity mirrors are formed by chemical etching. An etching solution consisting of NaOH, H2O2, and NH4OH has turned out to offer excellently flat-cavity mirrors on
  • Keywords
    Chemical lasers; DH-HEMTs; Etching; Laser modes; Light sources; MONOS devices; Mirrors; Optical device fabrication; Temperature; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1977.1069406
  • Filename
    1069406
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1069797