• DocumentCode
    1069983
  • Title

    The effects of storage time variations on the forward resistance of silicon p+-n-n+diodes at microwave frequencies

  • Author

    Martinelli, Ramon U. ; Rosen, Arye

  • Author_Institution
    RCA Laboratories, Princeton, NJ
  • Volume
    27
  • Issue
    9
  • fYear
    1980
  • fDate
    9/1/1980 12:00:00 AM
  • Firstpage
    1728
  • Lastpage
    1732
  • Abstract
    Minority-carrier storage times in p+-n-n+diodes have been measured over a wide range of diode diameters and forward currents. The reduction of the storage time by surface recombination and by high-level charge injection has been observed. By increasing the diode diameter, a significant increase in the storage time is achievable. The decrease in storage times at high injection levels explains the dependence of the diode´s forward resistance upon forward drive at microwave frequencies.
  • Keywords
    Current measurement; Diodes; Electrical resistance measurement; Frequency measurement; Microwave frequencies; Microwave measurements; Silicon; Surface resistance; Switches; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1980.20094
  • Filename
    1480887
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1069983