Modeling of the distributed gate RC effect in MOSFET´s

Author

Kim, Lee-Sup ; Dutton, Robert W.

Author_Institution

Center for Integrated Syst., Stanford Univ., CA, USA

Volume

8

Issue

12

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

1365

Lastpage

1367

Abstract

Scattering parameters of wide MOSFET devices have been measured at the wafer level in the frequency range up to 1 GHz. These scattering parameters are converted to Y-parameters for device characterization and compared with SPICE simulations of L-, Π-, and T-ladder distributed RC circuits taking into account the effect of distributed gates. Good experimental agreement shows that this effect can be modeled appropriately by multisection RC ladders, especially T-ladder circuits. Differences among ladder circuits in modeling this effect are discussed qualitatively

Keywords

S-parameters; equivalent circuits; insulated gate field effect transistors; semiconductor device models; Π-ladder circuits; L-ladder circuit; MOSFET; T-ladder circuits; Y-parameters; device characterization; distributed gate RC effect; scattering parameters; wide devices; Analytical models; Delay effects; Frequency measurement; Gain measurement; Length measurement; MOSFET circuits; SPICE; Scattering parameters; Semiconductor device modeling; Time domain analysis;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.44517

Filename

44517