DocumentCode :
1070197
Title :
Geometric effects on the gate-controlled capacitor
Author :
Slutsky, E.B. ; Zemel, J.N.
Author_Institution :
Bell Laboratories, Reading, PA
Volume :
27
Issue :
9
fYear :
1980
fDate :
9/1/1980 12:00:00 AM
Firstpage :
1843
Lastpage :
1846
Abstract :
The effect of p-n junction geometry on the capacitance-voltage ( 
) and conductance-voltage ( 
) characteristics of a gate-controlled Capacitor (GCC) is discussed. Three p-n junction geometries were studied; one was a circular structure and the remaining two were cross structures. It is concluded that the effective transit distances are decreased as the geometries of the junction become more complex.
) and conductance-voltage ( ) characteristics of a gate-controlled Capacitor (GCC) is discussed. Three p-n junction geometries were studied; one was a circular structure and the remaining two were cross structures. It is concluded that the effective transit distances are decreased as the geometries of the junction become more complex.Keywords :
Admittance; Arm; Capacitance; Capacitors; Geometry; Material storage; P-n junctions; Resistors; Surface resistance; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1980.20115
Filename :
1480908
Link To Document :
