DocumentCode :
1071086
Title :
Partially grooved domain stabilization structures for vertical Bloch line memory
Author :
Katti, R.R. ; Dooley, James A. ; Meng, A.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Volume :
29
Issue :
6
fYear :
1993
fDate :
11/1/1993 12:00:00 AM
Firstpage :
2578
Lastpage :
2580
Abstract :
Bias field stability ranges were measured and numerically simulated for magnetic domains in garnets stabilized by partially grooved rectangular and ring grooves. Simulation results agree favorably with experimental results when the finite slope effects of the groove walls are included. As bias fields increase, destabilization in rectangular and ring domains occurs by runout and midstripe domain buckling, respectively. While ring domains are stable at lower bias fields than rectangular domains, bias field stability ranges are approximately equal. For the same partial grooving depth, rectangular domains are preferred because they offer higher storage density potential for vertical Bloch line storage, as long as the bit propagation margins at the stripe ends are sufficient
Keywords :
Bloch line memories; magnetic domains; numerical analysis; 2 micron; GdGG; GdGa5O12; YBiGdHoCaFe5O12Ga5O12Si5O12; YBiGdHoCaIGGGSi5O12; bias field stability; bit propagation margins; computer simulation; finite slope effects; magnetic domains; midstripe domain buckling; numerical simulation; partially grooved domain stabilisation structure; rectangular domains; rectangular grooves; ring domains; ring grooves; storage density; vertical Bloch line memory; Computer simulation; Garnets; Magnetic domains; Magnetic field measurement; Magnetic materials; Microelectronics; Propulsion; Saturation magnetization; Space technology; Stability;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.280948
Filename :
280948
Link To Document :
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