Title :
TP-A7 silicon-nickel silicide heterostructures grown by molecular-beam epitaxy
Author :
Bean, J.C. ; Poate, J.M.
fDate :
11/1/1980 12:00:00 AM
Keywords :
Crystallization; Laser modes; Laser theory; Molecular beam epitaxial growth; Nickel; Silicides; Silicon; Substrates; Surface emitting lasers; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.20212
